Scanning X-ray nanodiffraction: from the experimental approach towards spatially resolved scattering simulations

نویسندگان

  • Martin Dubslaff
  • Michael Hanke
  • Jens Patommel
  • Robert Hoppe
  • Christian G Schroer
  • Sebastian Schöder
  • Manfred Burghammer
چکیده

: An enhancement on the method of X-ray diffraction simulations for applications using nanofocused hard X-ray beams is presented. We combine finite element method, kinematical scattering calculations, and a spot profile of the X-ray beam to simulate the diffraction of definite parts of semiconductor nanostructures. The spot profile could be acquired experimentally by X-ray ptychography. Simulation results are discussed and compared with corresponding X-ray nanodiffraction experiments on single SiGe dots and dot molecules.

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عنوان ژورنال:

دوره 7  شماره 

صفحات  -

تاریخ انتشار 2012